DESD1Z12

Marking：12M；Package：SOD-123；Plastic-Encapsulate Diodes

FEATURES Bi-directionalESDprotection Lowreversestand-offvoltage:12V Lowreverseclampingvoltage Lowleakagecurrent Fastresponsetime JESD22-A114-BESDRatingofclass3Bperhumanbodymodel IEC61000-4-2Level4ESDprotection

DESD3Z12

Marking：12M；Package：SOD-323；TVS Diode

Features ◆150Wattspeakpulsepower(tp=8/20μs) ◆Transientprotectionforhighspeeddatalinesto IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ns) ◆ProtectsOnePowerorI/OPort ◆Lowleakagecurrent ◆Lowoperatingandclampingvoltages ◆Solid-stat

SM12

Marking：12M；Package：SOT-23；ESD PROTECTION

Features •ForSensitiveESDProtection •ExcellentClampingCapability •LowLeakage •FastResponse,ResponseTimeLessthan1ns •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •HalogenFree.“Green”Device(Note1) •LeadFreeFinish/RoHSCompliant(PSuffix

SM12T1G

Marking：12M；Package：SOT-23；2-Line Uni-directional TVS Diode

Features 450Wpeakpulsepower(8/20s) Protectsonebi-directionalortwouni-directionallines Ultralowleakage:nAlevel Operatingvoltage:12V Lowclampingvoltage Complieswithfollowingstandards: —IEC61000-4-2(ESD)immunitytest Airdischarge:+30kV/ Contactdischarge:+30kV —I

GSOT12C

Marking：12M；Package：SOT23；TVS Diode Array

IMBG120R008M2H

Marking：12M2H008；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2

Features •VDSS=1200VatTvj=25°C •IDDC=144AatTC=100°C •RDS(on)=7.7mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparas

IMBG120R012M2H

Marking：12M2H012；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2

Features •VDSS=1200VatTvj=25°C •IDDC=102AatTC=100°C •RDS(on)=12.2mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstpara

IMBG120R017M2H

Marking：12M2H017；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2

Features •VDSS=1200VatTvj=25°C •IDDC=76AatTC=100°C •RDS(on)=17.1mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparas

IMBG120R022M2H

Marking：12M2H022；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features •VDSS=1200VatTvj=25°C •IDDC=62AatTC=100°C •RDS(on)=21.6mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparas

IMBG120R026M2H

Marking：12M2H026；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features •VDSS=1200VatTvj=25°C •IDDC=53AatTC=100°C •RDS(on)=25.4mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparas