丝印：12M；Package：SOD-123；Plastic-Encapsulate Diodes

FEATURES Bi-directional ESD protection Low reverse stand-off voltage:12 V Low reverse clamping voltage Low leakage current Fast response time JESD22-A114-B ESD Rating of class 3B per human body model IEC 61000-4-2 Level 4 ESD protection

文件：668.44 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：12M；Package：SOD-323；TVS Diode

Features ◆ 150 Watts peak pulse power (tp = 8/20μs) ◆ Transient protection for high speed data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) ◆ Protects One Power or I/O Port ◆ Low leakage current ◆ Low operating and clamping voltages ◆ Solid-stat

文件：477.17 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：12M；Package：SOT-23；ESD PROTECTION

Features • For Sensitive ESD Protection • Excellent Clamping Capability • Low Leakage • Fast Response, Response Time Less than 1ns • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Halogen Free. “Green” Device (Note 1) • Lead Free Finish/RoHS Compliant (P Suffix

文件：1.54229 Mbytes 页数：3 Pages

SAMYANG

三阳电子

丝印：12M；Package：SOT-23；2-Line Uni-directional TVS Diode

Features 450W peak pulse power(8/20s) Protects one bi-directional or two uni-directional lines Ultra low leakage: nA level Operating voltage: 12V Low clamping voltage Complies with following standards: — IEC 61000-4-2 (ESD) immunity test Air discharge: +30kV/ Contact discharge: +30kV — I

文件：997.33 Kbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：12M；Package：SOT23；TVS Diode Array

文件：1.35497 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：12M2H008；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 144 A at TC = 100°C • RDS(on) = 7.7 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras

文件：1.22283 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：12M2H012；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 102 A at TC = 100°C • RDS(on) = 12.2 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against para

文件：1.30734 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：12M2H017；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 76 A at TC = 100°C • RDS(on) = 17.1 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras

文件：1.29305 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：12M2H022；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 62 A at TC = 100°C • RDS(on) = 21.6 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras

文件：1.31598 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：12M2H026；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 53 A at TC = 100°C • RDS(on) = 25.4 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras

文件：1.30229 Mbytes 页数：17 Pages

Infineon

英飞凌