丝印：12M；Package：SOD-123；Plastic-Encapsulate Diodes

FEATURES Bi-directional ESD protection Low reverse stand-off voltage:12 V Low reverse clamping voltage Low leakage current Fast response time JESD22-A114-B ESD Rating of class 3B per human body model IEC 61000-4-2 Level 4 ESD protection

文件：668.44 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：12M；Package：SOD-323；TVS Diode

Features ◆ 150 Watts peak pulse power (tp = 8/20μs) ◆ Transient protection for high speed data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) ◆ Protects One Power or I/O Port ◆ Low leakage current ◆ Low operating and clamping voltages ◆ Solid-stat

文件：477.17 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：12M；Package：SOT-23；ESD PROTECTION

Features • For Sensitive ESD Protection • Excellent Clamping Capability • Low Leakage • Fast Response, Response Time Less than 1ns • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Halogen Free. “Green” Device (Note 1) • Lead Free Finish/RoHS Compliant (P Suffix

文件：1.54229 Mbytes 页数：3 Pages

SAMYANG

三阳电子

丝印：12M；Package：SOT-23；2-Line Uni-directional TVS Diode

Features 450W peak pulse power(8/20s) Protects one bi-directional or two uni-directional lines Ultra low leakage: nA level Operating voltage: 12V Low clamping voltage Complies with following standards: — IEC 61000-4-2 (ESD) immunity test Air discharge: +30kV/ Contact discharge: +30kV — I

文件：997.33 Kbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：12M；Package：SOT23；TVS Diode Array

文件：1.35497 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：12M1H007；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDCC = 225 A at Tvj = 25°C • RDS(on) = 7 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied • Robust body diode for

文件：1.32098 Mbytes 页数：17 Pages

INFINEON

英飞凌

丝印：12M1H014；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDCC = 127 A at Tvj = 25°C • RDS(on) = 14 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Short circuit withstand time 3 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage c

文件：1.2934 Mbytes 页数：17 Pages

INFINEON

英飞凌

丝印：12M1H020；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDCC = 98 A at Tvj = 25°C • RDS(on) = 19 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Short circuit withstand time 3 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage ca

文件：1.30857 Mbytes 页数：17 Pages

INFINEON

英飞凌

丝印：12M1H040；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDCC = 55 A at Tvj = 25°C • RDS(on) = 39 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Short circuit withstand time 3 µs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage ca

文件：1.38658 Mbytes 页数：17 Pages

INFINEON

英飞凌

丝印：12M1H060；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

Features  Very low switching losses  Threshold-free on state characteristic  Benchmark gate threshold voltage, VGS(th) = 4.5V  0V turn-off gate voltage for easy and simple gate drive  Fully controllable dV/dt  Robust body diode for hard commutation  Temperature independent turn-off s

文件：1.27807 Mbytes 页数：17 Pages

INFINEON

英飞凌