IMW120R040M1H中文资料英飞凌数据手册PDF规格书

Features

• VDSS = 1200 V at Tvj = 25°C

• IDCC = 55 A at Tvj = 25°C

• RDS(on) = 39 mΩ at VGS = 18 V, Tvj = 25°C

• Very low switching losses

• Short circuit withstand time 3 µs

• Benchmark gate threshold voltage, VGS(th) = 4.2 V

• Robust against parasitic turn on, 0 V turn-off gate voltage can be applied

• Robust body diode for hard commutation

• .XT interconnection technology for best-in-class thermal performance

Potential applications

• Industrial drives

• Industrial power supplies

• Solar inverters

Product validation

• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

• Please also note the application note AN2019-05 for power and thermal cycling