| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Marking：12M1H014；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET Features •VDSS=1200VatTvj=25°C •IDCC=127AatTvj=25°C •RDS(on)=14mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •Shortcircuitwithstandtime3μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasiticturnon,0Vturn-offgatevoltagec | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：12M1H014；Package：PG-TO247-4-STD-T3.7；CoolSiC??1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology Features •VDSS=1200VatTvj=25°C •IDCC=127AatTvj=25°C •RDS(on)=14mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •Shortcircuitwithstandtime3μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasiticturnon,0Vturn-offgatevoltagec | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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