IMW120R040M1H

Marking：12M1H040；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features •VDSS=1200VatTvj=25°C •IDCC=55AatTvj=25°C •RDS(on)=39mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •Shortcircuitwithstandtime3µs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasiticturnon,0Vturn-offgatevoltageca

IMZ120R060M1H

Marking：12M1H060；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

Features Verylowswitchinglosses Threshold-freeonstatecharacteristic Benchmarkgatethresholdvoltage,VGS(th)=4.5V 0Vturn-offgatevoltageforeasyandsimplegatedrive FullycontrollabledV/dt Robustbodydiodeforhardcommutation Temperatureindependentturn-offs

IMZA120R007M1H

Marking：12M1H007；Package：PG-TO247-4-STD-T3.7；CoolSiC??1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology

Features •VDSS=1200VatTvj=25°C •IDCC=225AatTvj=25°C •RDS(on)=7mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasiticturnon,0Vturn-offgatevoltagecanbeapplied •Robustbodydiodefor

IMZA120R014M1H

Marking：12M1H014；Package：PG-TO247-4-STD-T3.7；CoolSiC??1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology

Features •VDSS=1200VatTvj=25°C •IDCC=127AatTvj=25°C •RDS(on)=14mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •Shortcircuitwithstandtime3μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasiticturnon,0Vturn-offgatevoltagec

IMZA120R020M1H

Marking：12M1H020；Package：PG-TO247-4-STD-T3.7；CoolSiC??1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology

Features •VDSS=1200VatTvj=25°C •IDCC=98AatTvj=25°C •RDS(on)=19mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •Shortcircuitwithstandtime3μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasiticturnon,0Vturn-offgatevoltageca

IMZA120R030M1H

Marking：12M1H030；Package：PG-TO247-4-STD-NT3.7；CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology

Features •VDSS=1200VatTvj=25°C •IDDC=70AatTc=25°C •RDS(on)=30mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •Shortcircuitwithstandtime3μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasiticturnon,0Vturn-offgatevoltagecan

IMZA120R040M1H

Marking：12M1H040；Package：PG-TO247-4-STD-T3.7；CoolSiC??1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology

Features •VDSS=1200VatTvj=25°C •IDCC=55AatTvj=25°C •RDS(on)=39mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •Shortcircuitwithstandtime3μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasiticturnon,0Vturn-offgatevoltageca

IMZC120R012M2H

Marking：12M2H012；Package：PG-TO247-4-U07；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features •VDSS=1200VatTvj=25°C •IDDC=91AatTC=100°C •RDS(on)=12mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasit

IMZC120R017M2H

Marking：12M2H017；Package：PG-TO247-4-U07；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features •VDSS=1200VatTvj=25°C •IDDC=69AatTC=100°C •RDS(on)=17mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasit

IMZC120R022M2H

Marking：12M2H022；Package：PG-TO247-4-U07；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features •VDSS=1200VatTvj=25°C •IDDC=57AatTC=100°C •RDS(on)=22mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasit