NVTYS007N04CTWG

Marking：007N04C；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 8.6 m, 49 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVTYS008N06CLTWG

Marking：008N06CL；Package：LFPAK33；MOSFET ??Power, Single N-Channel 60 V, 8.0 m, 63 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NX138AKH

Marking：0001；Package：SOT8001；60 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadless,ultrasmallDFN0606-3 (SOT8001)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •Veryfastswitching •TrenchMOSFET

NX138BKH

Marking：0001；Package：SOT8001；60 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN0606-3 (SOT8001)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFETte

NX3008NBKMB

Marking：0000；Package：SOT883B；30 V, single N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN1006B-3 (SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Veryfastswitching •Lowthresholdvoltage •TrenchMOSFETt

NX3008PBKMB

Marking：0000；Package：SOT883B；30 V, single P-channel Trench MOSFET

1.1Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 1.2Featuresandbenefits Veryfastswitching Lowthresholdvoltage TrenchMOSFE

NX5008NBKH

Marking：0001；Package：SOT8001；50 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN0606-3 (SOT8001)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFETte

NX7002BKH

Marking：0001；Package：SOT8001；60 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN0606-3 (SOT8001)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •Veryfastswitching •TrenchMOSFETt

PACDN006MR

Marking：006R；Package：MSOP-8；6-Channel ESD Protection Array

ProductDescription ThePACDN006isadiodearraydesignedtoprovidesixchannelsofESDprotectionforelectroniccomponentsorsubsystems.EachchannelconsistsofapairofdiodesthatsteeranESDcurrentpulsetoeitherthepositive(VP)ornegative(VN)supply.ThePACDN006protectsagains

PBSS5130QA

Marking：001010；Package：DFN1010D-3；30 V, 1 A PNP low VCEsat (BISS) transistor

1.Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. NPNcomplement:PBSS4130QA. 2.Featuresandbenefits •Verylowcollector-