PMXB65ENE中文资料安世数据手册PDF规格书

厂商型号	PMXB65ENE
功能描述	30 V, N-channel Trench MOSFET
丝印标识	00
封装外壳	SOT1215
文件大小	745.8 Kbytes
页面数量	15 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-5-28 23:01:00
人工找货	PMXB65ENE价格和库存，欢迎联系客服免费人工找货

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3

(SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

• Trench MOSFET technology

• Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

• Exposed drain pad for excellent thermal conduction

• ElectroStatic Discharge (ESD) protection 1 kV

• Very low Drain-Source on-state resistance RDSon = 44 mΩ

3. Applications

• Low-side load switch and charging switch for portable devices

• Power management in battery-driven portables

• LED driver

• DC-to-DC converters