IPTG007N06NM5

Marking：007N06N；Package：PG-HSOG-8-1；OptiMOS™ 5 Power-Transistor, 60 V

Features «Nechannel «Superiorthermalresistance «100avalanchetested «Pb-freeleadplating;RoHScompliant «Halogen-freeaccordingtoIEC61249-221

IQD005N04NM6

Marking：00504N6；Package：PG-TSON-8；MOSFET OptiMOSTM 6 Power-Transistor, 40 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IQD005N04NM6CG

Marking：00504NC；Package：PG-TTFN-9；MOSFET OptiMOSTM 6 Power-Transistor, 40 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IQD009N06NM5

Marking：00906N5；Package：PG-TSON-8；MOSFET OptiMOSTM 5 Power-Transistor, 60 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IQD009N06NM5CG

Marking：00906NC；Package：PG-TTFN-9；OptiMOSTM 5 Power-Transistor, 60 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IQE004NE1LM7

Marking：004E1L7；Package：PG-TSON-8；MOSFET OptiMOSTM 7 Power-Transistor, 15 V

Features •N-channel,logiclevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •OptimizedforhighperformanceSMPS,e.g.synchronousrectification

IQE004NE1LM7CG

Marking：004E1C7；Package：PG-TTFN-9；MOSFET OptiMOSTM 7 Power-Transistor, 15 V

Features •N-channel,logiclevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •OptimizedforhighperformanceSMPS,e.g.synchronousrectification

IQE008N03LM5CG

Marking：00803C5；Package：PG-TTFN-9-1；OptiMOS 5 power-Transistor, 30 V

Features *OprimizedforhighperformanceSMPS,e.g.sync.rec. *Verylowon-resistanceRds(on)@Vfs=4.5V *100avalanchetested *Superiorthermalresistance *N-channel *Pb-freeleadplating;RoHScompliant *Halogen-freeaccordingtoIEC61249-2-21

ISC009N03LF2S

Marking：009N03F2；Package：PG-TDSON-8；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features •Optimizedforawiderangeofapplications •N‑channel,logiclevel •100%avalanchetested •175°Crated •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21

ISL9007IUCZ

Marking：007CZ；Package：8LdMSOP；High Current LDO with Low IQ and High PSRR

ISL9007isahighperformanceLDOthatdeliversacontinuous400mAofloadcurrent.IthasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithanESRofupto200mΩ. TheISL9007hasaveryhighPSRRof75dBandoutputnoiselessthan30µVRMS.Whencoupled