NVMYS008N08LHTWG

Marking：008N08LH；Package：LFPAK4；MOSFET - Power, Single N-Channel 80 V, 8.8 m, 59 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVTYS003N04CLTWG

Marking：003N04CL；Package：LFPAK33；MOSFET - Power, Single N-Channel 40 V, 3.4 m, 107 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVTYS003N04CTWG

Marking：003N04C；Package：LFPAK33；MOSFET - Power, Single N-Channel 40 V, 3.9 m, 99 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVTYS004N04CLTWG

Marking：004N04CL；Package：LFPAK33；MOSFET - Power, Single N-Channel 40 V, 4.3 m, 85 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVTYS004N04CTWG

Marking：004N04C；Package：LFPAK33；MOSFET - Power, Single N-Channel 40 V, 4.9 m, 78 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVTYS005N04CLTWG

Marking：005N04CL；Package：LFPAK33；MOSFET ??Power, Single N-Channel 40 V, 4.8 m, 75 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVTYS005N04CTWG

Marking：005N04C；Package：LFPAK33；MOSFET ??Power, Single N-Channel 40 V, 5.6 m, 71 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVTYS005N06CLTWG

Marking：005N06CL；Package：LFPAK33；MOSFET - Power, Single N-Channel 60 V, 5.3 m, 89 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVTYS006N06CLTWG

Marking：006N06CL；Package：LFPAK33；MOSFET ??Power, Single N-Channel 60 V, 6.8 m, 71 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVTYS007N04CLTWG

Marking：007N04CL；Package：LFPAK33；MOSFET ??Power, Single N-Channel 40 V, 7.3 m, 54 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant