NTTYS009N08HLTWG

Marking：009N08HL；Package：LFPAK8；MOSFET - Power, Single N-Channel 80 V, 9 m, 58 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−FreeandareRoHSCompliant

NVMFS005N10MCLT1G

Marking：005L10；Package：DFN5；MOSFET ??Power, Single N-Channel 100 V, 5.1 m, 108 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •NVMFWS005N10MCL−WettableFlankProducts •TheseDevicesarePb−Free,HalogenFree/BFRFree,Berylliu

NVMFWS004N10MCT1G

Marking：004W10；Package：DFN5；MOSFET – Power, Single N-Channel 100 V, 3.9 m, 138 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFree,BerylliumFree andareRoHSCompliant

NVMFWS005N10MCLT1G

Marking：005W10；Package：DFN5；MOSFET ??Power, Single N-Channel 100 V, 5.1 m, 108 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •NVMFWS005N10MCL−WettableFlankProducts •TheseDevicesarePb−Free,HalogenFree/BFRFree,Berylliu

NVMTS001N06CLTXG

Marking：001N06CL；Package：DFNW8；MOSFET ??Power, Single N-Channel 60 V, 0.81 m, 398.2 A

Features •SmallFootprint(8x8mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •Power88Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •WettableFlankPlatedforEnhancedOpticalInspection •TheseD

NVMTS001N06CTXG

Marking：001N06C；Package：DFNW8；MOSFET ??Power, Single N-Channel 60 V, 0.91 m, 376 A

Features •SmallFootprint(8x8mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •WettableFlankPlatedforEnhancedOpticalInspection •TheseDevicesarePb−Free,HalogenFree/BFRFr

NVMYS003N08LHTWG

Marking：003N08LH；Package：LFPAK4；MOSFET - Power, Single N-Channel 80 V, 3.3 m, 132 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMYS005N10MCLTWG

Marking：005N10MCL；Package：LFPAK4；MOSFET – Power, Single N-Channel 100 V, 5.1 m, 108 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AECïQ101QualifiedandPPAPCapable •TheseDevicesarePbïFree,HalogenFree/BFRFree,BerylliumFreeandareRoHSCompliant

NVMYS006N08LHTWG

Marking：006N08LH；Package：LFPAK4；MOSFET - Power, Single N-Channel 80 V, 6.2 m, 77 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMYS007N10MCLTWG

Marking：007N10MCL；Package：LFPAK4；MOSFET - Power, Single N-Channel 100 V, 7 m, 83 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AECïQ101QualifiedandPPAPCapable •TheseDevicesarePbïFree,HalogenFree/BFRFree,BerylliumFreea