FQU5N20L

200VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •3.8A,200V,RDS(on)=1.2Ω@VGS=10V •Lowgatecharge(typical4.8nC) •LowCrss(typical6.0pF) •Fast

FQU5N20L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.8A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

G5N20J

DCMotorControlandClassDAmplifier

Features ·Fastswitching ·100%avalanchetested ·Improveddv/dtcapability ·RoHSCompliant Application ·DCMotorControlandClassDAmplifier ·UninterruptiblePowerSupply(UPS) ·Automotive

HM5N20I

N-ChannelEnhancementModePowerMOSFET

HM5N20R

N-ChannelEnhancementModePowerMOSFET

JMP5N20A

KQB5N20

200VN-ChannelMOSFET

KSMU5N20

200VN-CHANNELMOSFET

MTP5N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP5N20

POWERFIELDEFFECTTRANSISTOR