N-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFET

Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body

文件：727.53 Kbytes 页数：17 Pages

STMICROELECTRONICS

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丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：324.82 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFET

ST

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N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh??Power MOSFET

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adopt

文件：603.7 Kbytes 页数：13 Pages

STMICROELECTRONICS

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N-CHANNEL 650V Tjmax-0.9ohm-8A TO-220/FP/D/IPAK/D2PAK STripFET II MOSFET

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adopt

文件：489.18 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh??Power MOSFET

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adopt

文件：603.7 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体