N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 70A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 55mΩ(Max)@VGS= 10V APPLICATIONS · Battery Chargers · DC Choppers · Power Factor Correction (PFC) · DC-DC Converters · High Speed Power Switching Application

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ISC

无锡固电

N-CHANNEL 600V - 0.050W - 70A ISOTOP Zener-Protected MDmesh Power MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

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STMICROELECTRONICS

意法半导体

N沟道600V - 0.05 Ohm - 70A - ISOTOP有齐纳管保护的MDmesh(TM) 功率MOSFET

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s • INDUSTRY’S LOWEST ON-RESISTANCE \n• TIGHT PROCESS CONTROL \n• TYPICAL RDS(on) = 0.050Ω \n• IMPROVED ESD CAPABILITY \n• HIGH dv/dt AND AVALANCHE CAPABILITIES \n• LOW GATE INPUT RESISTANCE \n• LOW INPUT CAPACITANCE AND GATE CHARGE;

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意法半导体

TO-220F

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上传：深圳市博达晶芯科技有限公司

TO220F

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上传：深圳市勇越胜电子科技有限公司