N-CHANNEL 500V - 0.070ohm - 53A ISOTOP PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

文件：275.64 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N沟道500V 0.070 Ohm 53A ISOTOP POWERMESH II MOSFET

The PowerMESHTM II is the evolution of the first generation of MESH OVERLAYTM. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. • TYPICAL RDS(on) = 0.07\n• 100% AVALANCHE TESTED \n• EXTREMELY HIGH dv/dt CAPABILITY \n• GATE CHARGE MINIMIZED \n• NEW HIGH VOLTAGE BENCHMARK;

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意法半导体

N-CHANNEL 500V - 0.070ohm - 53A ISOTOP PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

文件：275.64 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

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