isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) =6.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.26 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 40V - 5.4mOHM - 80A - DPAK - TO-220 - IPAK STripFET TM Power MOSFET

Description These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. Features ■ Standard threshold drive ■ 100 avala

文件：336.13 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 40 V, 5.0, 80 A STripFET III

Description These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. Features ■ Standard threshold drive ■ 100 avala

文件：839.49 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

N-channel 40 V, 5.0 m廓, 80 A, DPAK, TO-220 STripFET??III Power MOSFET

文件：766.47 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 40V - 5.4m廓 - 80A - DPAK - TO-220 - IPAK STripFET??Power MOSFET

文件：465.36 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N沟道40 V、5.0 mOhm、80 A STripFET(TM) III功率MOSFET，DPAK封装

These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance. • Standard threshold drive \n• 100% avalanche tested;

ST

意法半导体

N-channel 40V - 5.4m廓 - 80A - DPAK - TO-220 - IPAK STripFET??Power MOSFET

文件：465.36 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 40 V, 5.0 m廓, 80 A, DPAK, TO-220 STripFET??III Power MOSFET

文件：766.47 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体