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STD8NM60ND中文资料意法半导体数据手册PDF规格书
STD8NM60ND规格书详情
描述 Description
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters.
特性 Features
■ The worldwide best RDS(on)* area amongst the fast recovery diode devices
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche capabilities
Application
■ Switching applications
产品属性
- 型号：
STD8NM60ND
- 功能描述：
MOSFET N-Ch 600 Volt 7 Amp FDMesh
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STM |
24+ |
TO-252 |
5000 |
全新原装正品,现货销售 |
询价 | ||
ST |
2511 |
TO-251PBF |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 | ||
STM |
23+ |
TO-252 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
ST/意法 |
22+ |
TO-252 |
12500 |
原装正品支持实单 |
询价 | ||
ST |
25+ |
TO-251PBF |
16900 |
原装，请咨询 |
询价 | ||
STMicroelectronics |
25+ |
N/A |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
ST |
23+ |
TO-252 |
8000 |
只做原装现货 |
询价 | ||
ST |
2447 |
TO-252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
ST/意法 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
STM |
24+ |
TO-252 |
25836 |
新到现货，只做全新原装正品 |
询价 |
