STD8N10L中文资料意法半导体数据手册PDF规格书

N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 0.25 Ω

■ AVALANCHE RUGGED TECHNOLOGY

■ 100 AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100°C

■ LOW INPUT CAPACITANCE

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

■ 175°C OPEARTING TEMPERATURE

■ APPLICATION ORIENTED CHARACTERIZATION

■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX -1)

■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX T4)

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ REGULATORS

■ DC-DC & DC-AC CONVERTERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)