isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.88 Kbytes 页数：2 Pages

ISC

无锡固电

Extremely low gate charge

文件：1.35784 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

N沟道650 V、0.79 Ohm典型值、5 A MDmesh M2功率MOSFET，DPAK封装

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

Extremely low gate charge

文件：1.35784 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.07 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device

文件：462.27 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体