N-channel 200 V, 10 mOmh typ., 140 A STripFET II Power MOSFET (with fast diode) in an ISOTOP package

Description This Power MOSFET is produced using STMicroelectronics’ unique STripFETTM process, which is specifically designed to minimize input capacitance and gate charge. The device offers extremely fast switching performance thanks to the intrinsic fast body diode, making the device ideal for

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N-channel 200 V, 10 mOhm typ., 140 A STripFET(TM) II Power MOSFET (with fast diode) in an ISOTOP package

This Power MOSFET is produced using STMicroelectronics’ unique STripFETTMprocess, which is specifically designed to minimize input capacitance and gate charge. The device offers extremely fast switching performance thanks to the intrinsic fast body diode, making the device ideal for hard switching t • Exceptional dv/dt capability\n• Low gate charge• 100% avalanche tested;

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