N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

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N沟道600V 0.098 Ohm 40A ISOTOP POWERMESH II MOSFET

The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. • TYPICAL RDS(on) = 0.098 Ω \n• 100% AVALANCHE TESTED \n• EXTREMELY HIGH dv/dt CAPABILITY \n• GATE CHARGE MINIMIZED \n• NEW HIGH VOLTAGE BENCHMARK;

ST

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600 V, 40 A short-circuit rugged IGBT

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N-CHANNEL 50A - 600V TO-247 Hyper Fast PowerMESH??IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “V” identifies a family optimized for high frequency. ■ HIGH CURRENT CAPABI

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N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT

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