STD9NM50N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=7.5A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.26Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STD9NM50N

N沟道500 V、0.73 Ohm、5 A MDmesh(TM) II功率MOSFET，DPAK封装; • AEC-Q101 qualified \n• 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.\n\n

STD9NM50N

N-channel 500V - 0.47廓 - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh??Power MOSFET

STD9NM50N

isc N-Channel MOSFET Transistor

STD9NM50N-1

N-channel 500V - 0.47廓 - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh??Power MOSFET

STF9NM50N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.5A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.26Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STF9NM50N

N-channel500V-0.47廓-7.5A-TO-220-TO-220FP-IPAK-DPAKSecondgenerationMDmesh??PowerMOSFET

STP9NM50N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.5A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.26Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STP9NM50N

N-channel500V-0.47廓-7.5A-TO-220-TO-220FP-IPAK-DPAKSecondgenerationMDmesh??PowerMOSFET