首页 >STD9N60M2-CUTTAPE>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=5.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.78Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Extremelylowgatecharge Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel600V,0.72??typ.,5.5AMDmeshIIPlus??lowQgPowerMOSFETsinTO-220FPandI2PAKFPpackages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel600V,0.72??typ.,5.5AMDmeshIIPlus??lowQgPowerMOSFETsinTO-220FPandI2PAKFPpackages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel600V,0.76??typ.,4.8AMDmeshIIPlus??lowQgPowerMOSFETinaPowerFLAT??5x6HVpackage Description ThisdeviceisanN-channelPowerMOSFET developedusinganewgenerationofMDmesh™ technology:MDmeshIIPlus™lowQg.This revolutionaryPowerMOSFETassociatesa verticalstructuretothecompany'sstriplayoutto yieldoneoftheworld'sloweston-resistanceand gatecharge | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Extremelylowgatecharge Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=5.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.78Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=5.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.78Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
21+ |
SOT252 |
20000 |
优势供应 实单必成 可开增值税13点 |
询价 | ||
ST/意法 |
23+ |
SOT252 |
5000 |
原装正品实单必成 |
询价 | ||
ST/意法 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST/意法 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST/意法 |
23+ |
TO252 |
28533 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十! |
询价 | ||
ST(意法半导体) |
24+ |
TO252 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ST |
156 |
只做正品 |
询价 | ||||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
ST/意法 |
23+ |
TO-252 |
360000 |
交期准时服务周到 |
询价 | ||
STM |
22+ |
TO 252 DPAK |
5000 |
15年光格 只做原装正品 |
询价 |
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