N-CHANNEL 200V - 0.65廓 - 5A DPAK STripFET??MOSFET

DESCRIPTION The STD5N20L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC Motor Control and lighting application. General Features ■ TYPICAL RDS(on) = 0.65 Ω @ 5V ■ CONDUCTION LOSSES REDUCED ■ LOW INPUT CAPACIA

文件：273.98 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 200V - 0.65廓 - 5A DPAK STripFET??MOSFET

DESCRIPTION The STD5N20L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC Motor Control and lighting application. General Features ■ TYPICAL RDS(on) = 0.65 Ω @ 5V ■ CONDUCTION LOSSES REDUCED ■ LOW INPUT CAPACIA

文件：273.98 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：TPM2007NK3；Package：TO-252-3L；200V N-Channel Enhancement Mode Power MOSFET

Features Vos = 200V,lp =5.5A Ros(on)

文件：2.08128 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

N-Channel 200 V (D-S) MOSFET

文件：1.64678 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

N沟道200 V、0.65 Ohm、5 A STripFET(TM) 功率MOSFET，DPAK封装

The STD5N20L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC Motor Control and lighting application. • TYPICAL RDS(on) = 0.65Ω @ 5V \n• LOW INPUT CAPACIATNCE \n• CONDUCTION LOSSES REDUCED \n• LOW THRESHOLD DEVICE;

ST

意法半导体