丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：306.27 Kbytes 页数：2 Pages

ISC

无锡固电

Low input capacitance and gate charge

文件：1.15344 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

N沟道600 V、5 A、0.84 Ohm典型值MDmesh(TM) II功率MOSFET，DPAK封装

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most d • AEC-Q101 qualified \n• 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件：1.10705 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

N-Channel 650V (D-S)Power MOSFET

文件：1.1088 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件：295.46 Kbytes 页数：2 Pages

ISC

无锡固电