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STD7N65M2

Extremely low gate charge

Description This device is an N-channel Power MOSFET developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demand

文件:1.06499 Mbytes 页数:17 Pages

STMICROELECTRONICS

意法半导体

STD7N65M2

N-Channel MOSFET uses advanced trench technology

文件:2.091489 Mbytes 页数:7 Pages

DOINGTER

杜因特

STD7N65M2

N沟道650 V、0.98 Ohm典型值、5 A MDmesh M2功率MOSFET,DPAK封装

This device is an N-channel Power MOSFET developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high effici • Extremely low gate charge \n• Excellent output capacitance (Coss) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

STF7N65M2

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) -RDS(on) = 1.15Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:318.04 Kbytes 页数:2 Pages

ISC

无锡固电

STF7N65M2

Extremely low gate charge

Description This device is an N-channel Power MOSFET developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demand

文件:904.79 Kbytes 页数:13 Pages

STMICROELECTRONICS

意法半导体

STP7N65M2

N-channel 650 V, 0.98 廓 typ., 5 A MDmesh??M2 Power MOSFETs in TO-220 and IPAK packages

Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most dem

文件:881.75 Kbytes 页数:18 Pages

STMICROELECTRONICS

意法半导体

技术参数

  • Package:

    DPAK

  • Grade:

    Industrial

  • VDSS(V):

    650

  • RDS(on)_max(@ VGS=10V)(Ω):

    1.15

  • Drain Current (Dc)_max(A):

    5

  • PTOT_max(W):

    60

  • Qg_typ(nC):

    9

供应商型号品牌批号封装库存备注价格
STM
21+
2500
TO-252 DPAK
询价
STM
23+
TO-252 DPAK
5000
原装现货支持送检
询价
ST(意法半导体)
24+
TO-252
9555
支持大陆交货,美金交易。原装现货库存。
询价
STMicroelectronics
21+
DPAK
2500
100%进口原装!长期供应!绝对优势价格(诚信经营)!
询价
STM
25+
TO-252
3675
就找我吧!--邀您体验愉快问购元件!
询价
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
22+
NA
3000
加我QQ或微信咨询更多详细信息,
询价
ST
23+
TO-252
50000
全新原装正品现货,支持订货
询价
ST/意法
23+
DPAK
50000
全新原装正品现货,支持订货
询价
ST/意法半导体
24+
TO-252-3
6000
全新原装深圳仓库现货有单必成
询价
更多STD7N65M2供应商 更新时间2025-10-4 14:10:00