N-channel 400 V, 0.73 廓 typ., 5.6 A MDmesh??II Power MOSFET in DPAK and TO-220 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

文件：1.07838 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：324.58 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道400 V、0.73 Ohm典型值、5.6 A MDmesh(TM) II功率MOSFET，DPAK封装

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 22.4A@ TC=25℃ • Drain Source Voltage- : VDSS= 400V(Min) • Static Drain-Source On-Resistance : RDS(on) = 790mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching

文件：320.27 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 400 V, 0.73 廓 typ., 5.6 A MDmesh??II Power MOSFET in DPAK and TO-220 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

文件：1.07838 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体