丝印：80N6F6；Package：DPAK；Automotive-grade N-channel 60 V, 4.4 m??typ., 80 A STripFET??VI DeepGATE??Power MOSFET in a DPAK package

文件：676.88 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60 V (D-S) 175 째C MOSFET

文件：998.79 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced SGT technology

文件：1.08523 Mbytes 页数：4 Pages

DOINGTER

杜因特

汽车级N沟道60 V、4.4 mOhm典型值、80 A STripFET(TM) VI DeepGATE(TM) 功率MOSFET，DPAK封装

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • AEC-Q101 qualified \n• Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

ST

意法半导体

N-Channel Enhancement Mode MOSFET

Application » Adaptor « Charger « Power management o SMPS Standby Power

文件：2.03279 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子