Silicon N Channel IGBT High Speed Power Switching

1. Trench gate technology (G5H series) 2. Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ 3. High speed switching tf = 150 ns typ 4. Low leak current ICES= 1 μA max 5. Isolated package TO-220FL

文件：158.83 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel IGBT High Speed Power Switching / Vce(sat) = 1.7V typ

1. Trench gate technology (G5H series)\n2. Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ\n3. High speed switching  tf = 150 ns typ\n4. Low leak current  ICES= 1 μA max\n5. Isolated package TO-220FL

Renesas

瑞萨

Silicon N Channel IGBT High Speed Power Switching

Features • Trench gate technology (G5H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High speed switching tf = 150 ns typ • Low leak current ICES = 1 μA max

文件：165.24 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel IGBT High Speed Power Switching

1. Trench gate technology (G5H series) 2. Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ 3. High speed switching tf = 150 ns typ 4. Low leak current ICES= 1 μA max 5. Isolated package TO-220FL

文件：158.83 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel IGBT High Speed Power Switching

• Trench gate technology (G5H series)\n• Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ\n• High speed switching tf = 150 ns typ\n• Low leak current ICES = 1 μA max;

Renesas

瑞萨

Silicon N Channel IGBT High Speed Power Switching

Renesas

瑞萨