RJP30E2

Silicon N Channel IGBT High Speed Power Switching

1.Trenchgatetechnology(G5Hseries) 2.LowcollectortoemittersaturationvoltageVCE(sat)=1.7Vtyp 3.Highspeedswitchingtf=150nstyp 4.LowleakcurrentICES=1μAmax 5.IsolatedpackageTO-220FL

RJP30E2DPK-M0

Silicon N Channel IGBT High Speed Power Switching

Features •Trenchgatetechnology(G5Hseries) •LowcollectortoemittersaturationvoltageVCE(sat)=1.7Vtyp •Highspeedswitchingtf=150nstyp •LowleakcurrentICES=1μAmax

RJP30E2DPP-M0

Silicon N Channel IGBT High Speed Power Switching

1.Trenchgatetechnology(G5Hseries) 2.LowcollectortoemittersaturationvoltageVCE(sat)=1.7Vtyp 3.Highspeedswitchingtf=150nstyp 4.LowleakcurrentICES=1μAmax 5.IsolatedpackageTO-220FL

30E2

SiliconNChannelIGBTHighSpeedPowerSwitching

1.Trenchgatetechnology(G5Hseries) 2.LowcollectortoemittersaturationvoltageVCE(sat)=1.7Vtyp 3.Highspeedswitchingtf=150nstyp 4.LowleakcurrentICES=1μAmax 5.IsolatedpackageTO-220FL

QM30E2Y

MEDIUMPOWERSWITCHINGUSEINSULATEDTYPE

MEDIUMPOWERSWITCHINGUSEINSULATEDTYPE •ICCollectorcurrent..........................30A •VCEXCollector-emittervoltage.........1000V •hFEDCcurrentgain...............................75 •InsulatedType •ULRecognizedYellowCardNo.E80276(N)FileNo.E80271 APPLICATION

RJH30E2

SiliconNChannelIGBTHighspeedpowerswitching

Features ●Trenchgateandthinwafertechnology(G6H-IIseries) ●Highspeedswitching:tr=80nstyp.,tf=150nstyp. ●Lowcollectortoemittersaturationvoltage:VCE(sat)=1.5Vtyp. ●Lowleakcurrent:ICES=1μAmax. ●Built-inFastRecoveryDiode:VF=1.4Vtyp.,trr=23nstyp.

SRBC-30E2AL

Non-IsolatedDC-DCConverter

SRBC-30E2AL

NON-ISOLATEDDC/DCCONVERTERS

SRBC-30E2AL

6Vdc-14VdcInput0.8Vdc-3.63Vdc/25Aor30AOutput