Silicon N Channel IGBT High Speed Power Switching

Features • Trench gate technology (G5H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High speed switching tf = 150 ns typ • Low leak current ICES = 1 μA max

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Silicon N Channel IGBT High Speed Power Switching

• Trench gate technology (G5H series)\n• Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ\n• High speed switching tf = 150 ns typ\n• Low leak current ICES = 1 μA max;

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PBFREE

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上传：深圳市拓亿芯电子有限公司

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上传：深圳市佳斯泰科技有限公司

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VSON8

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