| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Silicon N Channel IGBT Application: Inverter Features ● Short circuit withstand time (5 s typ.) ● Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C) ● Built in fast recovery diode (70 ns typ.) in one package ● Trench gate and thin wafer technology ● High speed switching 文件：171.44 Kbytes 页数：4 Pages | RENESAS 瑞萨 | RENESAS | ||
Silicon N Channel IGBT Application: Inverter Features ● Short circuit withstand time (5 s typ.) ● Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C) ● Built in fast recovery diode (70 ns typ.) in one package ● Trench gate and thin wafer technology ● High speed switching 文件：171.44 Kbytes 页数：4 Pages | RENESAS 瑞萨 | RENESAS | ||
Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 文件：170 Kbytes 页数：4 Pages | RENESAS 瑞萨 | RENESAS | ||
Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 文件：170 Kbytes 页数：4 Pages | RENESAS 瑞萨 | RENESAS | ||
600V - 12A - IGBT Application: Inverter Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 80 ns 文件：120.05 Kbytes 页数：10 Pages | RENESAS 瑞萨 | RENESAS | ||
Silicon N Channel IGBT cation: Inverter Silicon N Channel IGBT Application: Inverter Features Short circuit withstand time (5µs typ.) Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ. (at IC= 12 A, VGE= 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wa 文件：171.49 Kbytes 页数：4 Pages | RENESAS 瑞萨 | RENESAS | ||
Silicon N Channel IGBT cation: Inverter Silicon N Channel IGBT Application: Inverter Features Short circuit withstand time (5µs typ.) Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ. (at IC= 12 A, VGE= 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wa 文件：171.49 Kbytes 页数：4 Pages | RENESAS 瑞萨 | RENESAS | ||
Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 文件：170.13 Kbytes 页数：4 Pages | RENESAS 瑞萨 | RENESAS | ||
Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 文件：170.13 Kbytes 页数：4 Pages | RENESAS 瑞萨 | RENESAS | ||
600V - 50A - IGBT Application: Inverter Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 50 ns 文件：333.49 Kbytes 页数：10 Pages | RENESAS 瑞萨 | RENESAS |
技术参数
- 可下载：
SPICE
- 封装类型：
LDPAK(S)
- 通道数：
Single
- 配置[器件]：
Built-In FRD
- 逆变器：
YES
- PFC：
YES
- VCES (V)：
600
- Ic (峰值) (A)：
50
- IC (A) @25 °C：
25
- IC (A) @100 °C：
12
- VCE (sat)(V)：
1.7
- tf (µs) 典型值：
0.08
- tsc (µs)：
3
- FRD Vf (V)：
1.2
- FRD trr (ns)：
100
- Pch (W)：
63
- 应用：
Inverter
- 安装类型：
Surface Mount
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas |
22+ |
4LDPAK |
9000 |
原厂渠道,现货配单 |
询价 | ||
RENESAS/瑞萨 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
Renesas Electronics America |
2022+ |
4-LDPAK |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
RENESAS/瑞萨 |
23+ |
TO-263 |
89630 |
当天发货全新原装现货 |
询价 | ||
Renesas Electronics America In |
25+ |
SC-83 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
24+ |
N/A |
67000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
RENESAS丨全系列供应 |
23+ |
RENESAS丨全系列供应 |
8587 |
原厂授权代理分销现货只做原装正迈科技样品支持现货 |
询价 | ||
Renesas |
20+ |
N/A |
78 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
RENESAS |
25+ |
TO-220 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
RENESAS/瑞萨 |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
询价 |
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