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型号	下载订购	功能描述	制造商上传企业	LOGO
RJH60D0DPK	文件：171.47 Kbytes Page：4 Pages	Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 文件：171.47 Kbytes 页数：4 Pages	RENESAS 瑞萨	RENESAS
RJH60D0DPK	文件：300.1 Kbytes Page：2 Pages	IGBT DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.2V@IC=22A · High Current Capability · High Input Impedance APPLICATIONS · Synchronous Rectification in SMPS · Automotive Chargers · UPS,PFC 文件：300.1 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
RJH60D0DPK-00-T0	文件：171.47 Kbytes Page：4 Pages	Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 文件：171.47 Kbytes 页数：4 Pages	RENESAS 瑞萨	RENESAS
RJH60D0DPM	文件：89.45 Kbytes Page：8 Pages	Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 文件：89.45 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
RJH60D0DPQ-A0	文件：91.21 Kbytes Page：8 Pages	600 V - 22 A - IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 文件：91.21 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
RJH60D0DPQ-E0	文件：111.94 Kbytes Page：10 Pages	600V - 22A - IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed swi 文件：111.94 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
RJH60D0DPQ-E0-T2	文件：111.94 Kbytes Page：10 Pages	600V - 22A - IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed swi 文件：111.94 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
RJH60D1DPE	文件：170.02 Kbytes Page：4 Pages	Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 文件：170.02 Kbytes 页数：4 Pages	RENESAS 瑞萨	RENESAS
RJH60D1DPE-00-J3	文件：170.02 Kbytes Page：4 Pages	Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 文件：170.02 Kbytes 页数：4 Pages	RENESAS 瑞萨	RENESAS
RJH60D1DPP-E0	文件：121.43 Kbytes Page：10 Pages	600V - 10A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (70 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 75 ns 文件：121.43 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS

技术参数

可下载：
SPICE
封装类型：
LDPAK(S)
通道数：
Single
配置[器件]：
Built-In FRD
逆变器：
YES
PFC：
YES
VCES (V)：
600
Ic (峰值) (A)：
50
IC (A) @25 °C：
25
IC (A) @100 °C：
12
VCE (sat)(V)：
1.7
tf (µs) 典型值：
0.08
tsc (µs)：
3
FRD Vf (V)：
1.2
FRD trr (ns)：
100
Pch (W)：
63
应用：
Inverter
安装类型：
Surface Mount

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	RJH60D2DPE00#J3	Renesas	22+	4LDPAK	9000	原厂渠道,现货配单	询价
深圳市金芯世纪电子有限公司	RJH60D2DPE-00-J3	RENESAS/瑞萨	22+	SOT-263	100000	代理渠道/只做原装/可含税	询价
深圳市鹏顺微电子科技有限公司	RJH60D2DPE-00#J3	Renesas Electronics America	2022+	4-LDPAK	38550	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市晨豪科技有限公司	RJH60D2DPE-00-J3	RENESAS/瑞萨	23+	TO-263	89630	当天发货全新原装现货	询价
深圳市宏捷佳电子科技有限公司	RJH60D2DPE-00#J3	Renesas Electronics America In	25+	SC-83	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
现代芯城（深圳）科技有限公司	RJH60D2DPP-E0#T2		24+	N/A	67000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市正迈科技有限公司	RJH60D2DPP-M0#T2	RENESAS丨全系列供应	23+	RENESAS丨全系列供应	8587	原厂授权代理分销现货只做原装正迈科技样品支持现货	询价
深圳市艾宇欣科技有限公司	RJH60D2DPP-M0#T2	Renesas	20+	N/A	78	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	RJH60D2DPP-M0#T2	RENESAS	25+	TO-220	1675	就找我吧!--邀您体验愉快问购元件!	询价
深圳市威尔健半导体有限公司	RJH60D2DPP-M0#T2	RENESAS/瑞萨	23+	TO220	50000	全新原装正品现货,支持订货	询价

更多RJH60D供应商更新时间2026-1-27 14:30:00

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