RJH60D1DPE-00-J3中文资料瑞萨数据手册PDF规格书

特性 Features

• Short circuit withstand time (5 μs typ.)

• Low collector to emitter saturation voltage

VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)

• Built in fast recovery diode (100 ns typ.) in one package

• Trench gate and thin wafer technology

• High speed switching

tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 10 A, Rg = 5 Ω, inductive load)