RJH60D2DPP-M0-T2中文资料瑞萨数据手册PDF规格书

Silicon N Channel IGBT Application: Inverter

Features

Short circuit withstand time (5µs typ.)

Low collector to emitter saturation voltage

VCE(sat)= 1.7 V typ. (at IC= 12 A, VGE= 15 V, Ta = 25°C)

Built in fast recovery diode (100 ns typ.) in one package

Trench gate and thin wafer technology

High speed switching

tf= 80 ns typ. (at VCC= 300 V, VGE= 15 V, IC= 12 A, Rg = 5 , Ta = 25°C, inductive load)