Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and re

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Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and re

文件：206.33 Kbytes 页数：10 Pages

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High Power RF LDMOS Field Effect Transistor 10 W, 2110 ??2170 MHz

Description The PTF210101M is an unmatched 10-watt GOLDMOS® FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint. Features • Typical WCDMA performance - Average ou

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LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average out

文件：337.85 Kbytes 页数：8 Pages

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LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average out

文件：337.85 Kbytes 页数：8 Pages

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LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average out

文件：337.85 Kbytes 页数：8 Pages

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LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz

Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Internal matching for wideband performance • Typical two–carrier WCDMA performance

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LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz

Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Internal matching for wideband performance • Typical two–carrier WCDMA performance

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LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz

Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Internal matching for wideband performance • Typical two–carrier 3GPP WCDMA perfo

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LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz

Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Internal matching for wideband performance • Typical two–carrier 3GPP WCDMA perfo

文件：266.34 Kbytes 页数：8 Pages

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