MOS FIELD EFFECT TRANSISTOR

DESCRIPTION: The ASI PTF10019 is Designed for Cellular, GSM, and D-AMPS applicarions from 860 tp 960 MHz. FEATURES: • 70 W, 860-960 MHz • Internally matched • Omnigold™ Metalization System • Silicon Nitride Passivated

文件：43.23 Kbytes 页数：1 Pages

ASI

125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. • INTERNALLY MATCHED • Performance at 960 MHz, 28 Vol

文件：313.72 Kbytes 页数：6 Pages

ERICSSON

爱立信

30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor

Description The PTF 10021 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. It is rated at 30 watts power output. Nitride surface passivation and full gold metallization e

文件：278.76 Kbytes 页数：6 Pages

ERICSSON

爱立信

50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10031 is a 50 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55 efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 960 MHz, 28 V

文件：215.59 Kbytes 页数：6 Pages

ERICSSON

爱立信

85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description The PTF 10036 is an internally matched, 85 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • INTERNALLY MATCHED • Performance at 960 MHz, 28

文件：220.97 Kbytes 页数：6 Pages

ERICSSON

爱立信

12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45 efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliab

文件：235.44 Kbytes 页数：6 Pages

ERICSSON

爱立信

30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor

Description The PTF 10045 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.65 GHz. It is rated at 30 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. • Perfor

文件：207.22 Kbytes 页数：6 Pages

ERICSSON

爱立信

30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor

Description The PTF 10048 is an internally matched 30–watt GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It operates at 40 efficiency with 10.5 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • INTERNAL

文件：233.65 Kbytes 页数：6 Pages

ERICSSON

爱立信

35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10052 is a 35 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55 efficiency and 13.5 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 960 MHz, 28 V

文件：498.65 Kbytes 页数：6 Pages

ERICSSON

爱立信

12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40 efficiency with 12 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Guaranteed Performance

文件：81.07 Kbytes 页数：6 Pages

ERICSSON

爱立信