100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor

Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. • I

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5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10135 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 5 watts minimum output power. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. 100

文件：245.76 Kbytes 页数：6 Pages

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6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10136 is a 6–watt GOLDMOS FET intended for large signal amplifier applications from to 1.0 GHz. It operates at 57 efficiency with 19 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 960

文件：205.7 Kbytes 页数：7 Pages

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12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60 efficiency with 18 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 960 MHz, 28 Vo

文件：175.49 Kbytes 页数：6 Pages

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60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description The PTF 10138 is a 60–watt GOLDMOS FET intended for amplifier applications to 860-960 MHz. It operates at 48 efficiency with 12.5 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 960 MHz, 28 Volts

文件：106.96 Kbytes 页数：6 Pages

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60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55 efficiency with 12.5 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 960 M

文件：115.85 Kbytes 页数：6 Pages

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70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor

Description The PTF 10149 is an internally matched 70–watt GOLDMOS FET intended for cellular and GSM amplifier applications from 921 to 960 MHz. It operates with 50 efficiency and 16 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reli

文件：215.46 Kbytes 页数：6 Pages

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60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10153 is an internally matched 60–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It operates with 40 efficiency and 11.5 dB minimum gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

文件：108.33 Kbytes 页数：5 Pages

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85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor

Description The PTF 10154 is an internally matched 85–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.93 to 1.99 GHz. This device operates at 43 efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. •

文件：256.72 Kbytes 页数：5 Pages

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85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53 efficiency and 16 dB typical gain. Full gold metallization ensures excellent device lifetime and reliability. • INTERNALLY MATCHED • Performance a

文件：253.11 Kbytes 页数：7 Pages

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