165 Watts, 869-894 MHz GOLDMOS Field Effect Transistor

Description The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50 efficiency and 16 db of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and re

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18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55 efficiency with 12.5 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 960 M

文件：341.34 Kbytes 页数：8 Pages

ERICSSON

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12 Watts, 860-960 MHz GOLDMOS??Field Effect Transistor

Description The PTF 10193 is an internally matched, 12–watt GOLDMOS FET intended for GSM, CDMA and TDMA amplifier applications from 860 to 960 MHz. This device operates at 60 efficiency with 18 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifeti

文件：331.91 Kbytes 页数：6 Pages

ERICSSON

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125 Watts, 869-894 MHz GOLDMOS Field Effect Transistor

Description The 10195 is an internally matched 125–watt GOLDMOS FET intended for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device operates at 53 efficiency with 13 dB of gain minimum. Full gold metallization ensures excellent device lifetime and reliability. • INTERNALLY MATCHED •

文件：328.96 Kbytes 页数：6 Pages

ERICSSON

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40 Watts, 925-960 MHz GOLDMOS Field Effect Transistor

Description The PTF 102027 is a 40–watt GOLDMOS FET intended for EDGE applications from 925 to 960 MHz. This device operates at 53 efficiency with 15 dB of gain typical. Full gold metallization ensures excellent device lifetime and reliability. • Performance at 960 MHz, 26 Volts - Output Po

文件：207.16 Kbytes 页数：6 Pages

ERICSSON

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18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description The PTF 102028 is an 18–watt GOLDMOS FET intended for large signal amplifier applications 860 to 960 MHz. It operates with 55 efficiency and 15 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 960 MHz,

文件：219.86 Kbytes 页数：7 Pages

ERICSSON

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General Purpose Relay

A Miniature Power Relay ■ Equipped with arc barrier. ■ Dielectric strength: 2,000 V. ■ Built-in diode models added to the LY Series. ■ Single-pole and double-pole models are applicable to operating coils with ratings of 100/110 VAC, 110/120 VAC, 200/220 VAC, 220/240 VAC, or 100/110 VDC

文件：300.71 Kbytes 页数：13 Pages

OMRON

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General Purpose Relay

A Miniature Power Relay ■ Equipped with arc barrier. ■ Dielectric strength: 2,000 V. ■ Built-in diode models added to the LY Series. ■ Single-pole and double-pole models are applicable to operating coils with ratings of 100/110 VAC, 110/120 VAC, 200/220 VAC, 220/240 VAC, or 100/110 VDC

文件：300.71 Kbytes 页数：13 Pages

OMRON

欧姆龙

General Purpose Relay

A Miniature Power Relay ■ Equipped with arc barrier. ■ Dielectric strength: 2,000 V. ■ Built-in diode models added to the LY Series. ■ Single-pole and double-pole models are applicable to operating coils with ratings of 100/110 VAC, 110/120 VAC, 200/220 VAC, 220/240 VAC, or 100/110 VDC

文件：300.71 Kbytes 页数：13 Pages

OMRON

欧姆龙

LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz

Description The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability. Features • Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB

文件：310.59 Kbytes 页数：10 Pages

INFINEON

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