High Power RF LDMOS Field Effect Transistor 10 W, 1.0 ??2.0 GHz

Description The PTF180101M is an unmatched 10-watt GOLDMOS® FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint. Features • Typical EDGE performance - Average output po

文件：314.5 Kbytes 页数：8 Pages

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LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz

Description The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability. Features • Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB

文件：310.59 Kbytes 页数：10 Pages

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LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz

Description The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability. Features • Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB

文件：209.3 Kbytes 页数：10 Pages

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LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz

Description The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical two-tone performance - Average output power =

文件：233.46 Kbytes 页数：11 Pages

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LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz

Description The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical two-tone performance - Average output power =

文件：233.46 Kbytes 页数：11 Pages

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LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz

Description The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical two-tone performance - Average output power =

文件：233.46 Kbytes 页数：11 Pages

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LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz

Description The PTF181301 is a 130 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average o

文件：66.39 Kbytes 页数：4 Pages

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LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz

Description The PTF181301 is a 130 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average o

文件：66.39 Kbytes 页数：4 Pages

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LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz

Description The PTF191601 is a 160 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average o

文件：61.2 Kbytes 页数：4 Pages

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LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz

Description The PTF191601 is a 160 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average o

文件：61.2 Kbytes 页数：4 Pages

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