PTF180101S说明书PDF资料原装现货英飞凌-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
PTF180101S	文件：310.59 Kbytes Page：10 Pages	LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz Description The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability. Features • Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB 文件：310.59 Kbytes 页数：10 Pages	INFINEON 英飞凌	INFINEON
PTF180101S	文件：209.3 Kbytes Page：10 Pages	LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz Description The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability. Features • Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB 文件：209.3 Kbytes 页数：10 Pages	INFINEON 英飞凌	INFINEON
PTF180101S	文件：300 bytes Page：1 Pages	LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz	Infineon 英飞凌	Infineon
PTF180101S V1	文件：100 bytes Page：1 Pages	Package：H-32259-2；包装：带类别：分立半导体产品晶体管 - FET，MOSFET - 射频描述：FET RF 65V 1.99GHZ H-32259-2	INFINEON 英飞凌	INFINEON

型号：
PTF180101S
制造商：
INFINEON
制造商全称：
Infineon Technologies AG
功能描述：
LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz

更多PTF180101S供应商更新时间2026-4-17 10:20:00