PTF181301资料使用说明书贸易商英飞凌-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
PTF181301	文件：66.39 Kbytes Page：4 Pages	LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz Description The PTF181301 is a 130 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average o 文件：66.39 Kbytes 页数：4 Pages	INFINEON 英飞凌	INFINEON
PTF181301A	文件：66.39 Kbytes Page：4 Pages	LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz Description The PTF181301 is a 130 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average o 文件：66.39 Kbytes 页数：4 Pages	INFINEON 英飞凌	INFINEON
PTFZ-08-E BY OMZ/C	文件：0 bytes Page：0 Pages		OMRON/欧姆龙上传：深圳市英创达电子半导体有限公司	OMRON/欧姆龙
PTH04000WAZ	文件：0 bytes Page：0 Pages	EUT-6	TI/德州仪器上传：深圳市坤融电子科技有限公司	TI/德州仪器
PTH04070WAH	文件：0 bytes Page：0 Pages	模块	TI 德州仪器上传：齐创科技(上海,北京,青岛)有限公司	TI

更多PTF181301供应商更新时间2026-4-18 14:30:00