PTF210301A说明书PDF资料供应商报价英飞凌-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
PTF210301A	文件：337.85 Kbytes Page：8 Pages	LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average out 文件：337.85 Kbytes 页数：8 Pages	INFINEON 英飞凌	INFINEON
PTF210301A	文件：300 bytes Page：1 Pages	LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz	Infineon 英飞凌	Infineon
PTF210301E	文件：337.85 Kbytes Page：8 Pages	LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average out 文件：337.85 Kbytes 页数：8 Pages	INFINEON 英飞凌	INFINEON
PTFA210301E	文件：198.94 Kbytes Page：9 Pages	Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz 文件：198.94 Kbytes 页数：9 Pages	INFINEON 英飞凌	INFINEON

更多PTF210301A供应商更新时间2026-4-18 10:32:00