Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz

文件：198.94 Kbytes 页数：9 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz

Infineon

英飞凌

LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average out

文件：337.85 Kbytes 页数：8 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average out

文件：337.85 Kbytes 页数：8 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average out

文件：337.85 Kbytes 页数：8 Pages

INFINEON

英飞凌