High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz

Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifi er applications in the 700 to 2200 MHz. This LDMOS device offers excellent gain, effi ciency and linearity performance in a small overmolded plastic package. Features • Typical two-carrier WCDMA performance

文件：245.64 Kbytes 页数：19 Pages

Infineon

英飞凌

High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz

Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS device offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. Features • Typical two-carrier WCDMA performance a

文件：955.14 Kbytes 页数：21 Pages

Cree

科锐

High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz

文件：381.62 Kbytes 页数：21 Pages

Infineon

英飞凌

High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz

文件：381.62 Kbytes 页数：21 Pages

Infineon

英飞凌

High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz

文件：381.62 Kbytes 页数：21 Pages

Infineon

英飞凌

High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz

文件：381.62 Kbytes 页数：21 Pages

Infineon

英飞凌

High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz

Infineon

英飞凌

High Power RF LDMOS FET,12 W, 28 V, 700 – 2200 MHz

The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS device offers excellent gain, eficiency and linearity performance in a small overmolded plastic package. • Typical CW performance, 2140 MHz, 28 V• POUT = 41.6 dBm\n• Efficiency = 53.5%\n• Gain = 15.5 dB\n\n• Typical CW performance, 877 MHz, 28 V• POUT = 41.8 dBm\n• Efficiency = 60%\n• Gain = 19.9 dB\n\n• Capable of handling 10:1 VSWR @ 28 V, 12 W (CW) output power\n• Integrated ESD protection\n;

MACOM

General Purpose Transistors (700 MHz to 2700 MHz)

High Power RF LDMOS FET, 12 W, 28 V, 700 - 2200 MHz • Typical two-carrier WCDMA performance at 2140 MHz, 8 dB PAR    - P OUT = 33 dBm Avg    - ACPR = –45.5 dBc • Typical two-carrier WCDMA performance at 877 MHz, 8 dB PAR    - P OUT = 33 dBm Avg    - ACPR = –44.5 dBc • Typical CW performance, 2140 MHz, 28 V    - P OUT = 41.6 dBm    - Efficiency = 53.5;

Infineon

英飞凌

Package：10-LDFN 裸露焊盘；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF LDMOS 10W SON10

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