PTFA220121MV4R1K数据手册Infineon中文资料规格书

描述 Description

High Power RF LDMOS FET, 12 W, 28 V, 700 - 2200 MHz

特性 Features

• Typical two-carrier WCDMA performance at 2140 MHz, 8 dB PAR    - P OUT = 33 dBm Avg    - ACPR = –45.5 dBc
• Typical two-carrier WCDMA performance at 877 MHz, 8 dB PAR    - P OUT = 33 dBm Avg    - ACPR = –44.5 dBc
• Typical CW performance, 2140 MHz, 28 V    - P OUT = 41.6 dBm    - Efficiency = 53.5% - Gain = 15.5 dB
• Typical CW performance, 877 MHz, 28 V    - P OUT = 41.8 dBm    - Efficiency = 60%    - Gain = 19.9 dB
• Capable of handling 10:1 VSWR @ 28 V, 12 W (CW) output power
• Integrated ESD protection
• Excellent thermal stability
• Pb-free and RoHS compliant