PTFA192001EV4数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

High Power RF LDMOS FETs, 200 W, 30 V, 1930 – 1990 MHz

特性 Features

·Broadband input and output matching
Typical two-carrier WCDMA performance at 1990 MHz, 30 V - Average output power = 47 dBm - Linear Gain = 15.9 dB - Efficiency = 27% - IMD = -36 dBc - ACPR = -41 dBc
·Typical CW performance, 1960 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 57%
·Capable of handling 5:1 VSWR @ 30 V, 200 W (CW) output power
·Integrated ESD protection. Human Body Model, Class 2 (minimum) 
·Excellent thermal stability, low HCI drift
·Pb-free and RoHS compliant
·Package: H-362620-2, bolt-down

简介

PTFA192001EV4属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的PTFA192001EV4晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。