PTFA212001EV4数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

High Power RF LDMOS FETs, 200 W, 30 V, 2110 – 2170 MHz

特性 Features

·Broadband internal matching
·Typical two-carrier WCDMA performance at 2140 MHz, 30 V - Average output power = 50 W - Linear Gain = 15.8 dB - Efficiency = 28% - Intermodulation distortion = –35.5 dBc - Adjacent channel power = –40 dBc
·Typical single-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, P/AR = 7.5 dB - Average output power = 70 W - Linear Gain = 15.5 dB - Efficiency = 34% - Adjacent channel power = –37 dBc
·Typical CW performance, 2170 MHz, 30V - Output power at P–1dB = 220 W - Efficiency = 54%
·Integrated ESD protection: Human Body Model, Class 2 (minimum)
·Excellent thermal stability, low HCI drift
·Capable of handling 5:1 VSWR @ 30 V, 200 W (CW) output power
·Package : H-36260-2, bolt-down

简介

PTFA212001EV4属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的PTFA212001EV4晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。