High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz

Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. Features • Typical two-carrier

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High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz

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General Purpose Transistors (700 MHz to 2700 MHz)

High Power RF LDMOS FET, 8 W, 700 – 2200 MHz ·Typical two-carrier WCDMA performance, 8 dB PAR - POUT = 33 dBm Avg - ACPR = –40 dBc,\n ·Typical CW performance, 940 MHz, 28 V - P OUT = 40 dBm - Efficiency = 59% - Gain = 20 dB\n ·Typical CW performance, 2140 MHz, 28 V, - P OUT = 40 dBm - Efficiency = 50% - Gain = 15 dB\n ·Capable of h;

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RF MOSFET TRANSISTORS

Wolfspeed(CREE)

Package：10-LDFN 裸露焊盘；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF LDMOS 8W SON10

WOLFSPEED

包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS 10-SON

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