PTFA220081MV4中文资料General Purpose Transistors (700 MHz to 2700 MHz)数据手册Infineon规格书

描述 Description

High Power RF LDMOS FET, 8 W, 700 – 2200 MHz

特性 Features

·Typical two-carrier WCDMA performance, 8 dB PAR - POUT = 33 dBm Avg - ACPR = –40 dBc,
·Typical CW performance, 940 MHz, 28 V - P OUT = 40 dBm - Efficiency = 59% - Gain = 20 dB
·Typical CW performance, 2140 MHz, 28 V, - P OUT = 40 dBm - Efficiency = 50% - Gain = 15 dB
·Capable of handling 10:1 VSWR @ 28 V, 8 W (CW) output power
·Integrated ESD protection
·Excellent thermal stability
·Pb-free and RoHS compliant
·Package: PG-SON-10

简介

PTFA220081MV4属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的PTFA220081MV4晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。