PTF211802资料使用说明书批发供应英飞凌-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
PTF211802	文件：169.14 Kbytes Page：8 Pages	LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25 - IM3 = –37 dBc - ACPR 文件：169.14 Kbytes 页数：8 Pages	INFINEON 英飞凌	INFINEON
PTF211802A	文件：169.14 Kbytes Page：8 Pages	LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25 - IM3 = –37 dBc - ACPR 文件：169.14 Kbytes 页数：8 Pages	INFINEON 英飞凌	INFINEON
PTF211802E	文件：169.14 Kbytes Page：8 Pages	LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25 - IM3 = –37 dBc - ACPR 文件：169.14 Kbytes 页数：8 Pages	INFINEON 英飞凌	INFINEON
PTF211802A	文件：300 bytes Page：1 Pages	LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz	Infineon 英飞凌	Infineon

更多PTF211802供应商更新时间2026-4-17 14:29:00