PTF210901数据手册原装现货英飞凌INFINEON-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
PTF210901	文件：266.34 Kbytes Page：8 Pages	LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Internal matching for wideband performance • Typical two–carrier 3GPP WCDMA perfo 文件：266.34 Kbytes 页数：8 Pages	INFINEON 英飞凌	INFINEON
PTF210901	文件：300 bytes Page：1 Pages	LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz	Infineon 英飞凌	Infineon
PTF210901E	文件：266.34 Kbytes Page：8 Pages	LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Internal matching for wideband performance • Typical two–carrier 3GPP WCDMA perfo 文件：266.34 Kbytes 页数：8 Pages	INFINEON 英飞凌	INFINEON
PTFZ-08-E BY OMZ/C	文件：0 bytes Page：0 Pages		OMRON/欧姆龙上传：深圳市英创达电子半导体有限公司	OMRON/欧姆龙
PTH04000WAZ	文件：0 bytes Page：0 Pages	EUT-6	TI/德州仪器上传：深圳市坤融电子科技有限公司	TI/德州仪器

更多PTF210901供应商更新时间2026-1-19 16:33:00