LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz

Description The PTF191601 is a 160 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average o

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Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and re

文件：206.33 Kbytes 页数：10 Pages

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英飞凌

LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz

Infineon

英飞凌

Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and re

文件：206.33 Kbytes 页数：10 Pages

INFINEON

英飞凌